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HMN1M8DN Datenblatt(PDF) 6 Page - Hanbit Electronics Co.,Ltd

Teilenummer HMN1M8DN
Bauteilbeschribung  Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 40Pin-DIP, 5V
PDF  9 Pages
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Hersteller  HANBIT [Hanbit Electronics Co.,Ltd]
Direct Link  http://www.hbe.co.kr
Logo HANBIT - Hanbit Electronics Co.,Ltd

HMN1M8DN Datenblatt(HTML) 6 Page - Hanbit Electronics Co.,Ltd

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HANBit
HMN1M8DN
URL : www.hbe.co.kr
6
HANBit Electronics Co.,Ltd.
REV. 0.2 (August, 2002)
POWER-DOWN/POWER-UP CYCLE (TA= TOPR, VCC=5V)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP.
MAX
UNIT
VCC slew, 4.75 to 4.25V
tPF
300
-
-
㎲
VCC slew, 4.75 to VSO
tFS
10
-
-
㎲
VCC slew, VSO to VPFD (max)
tPU
0
-
-
㎲
Chip enable recovery time
tCER
Time during which SRAM
is write-protected after VCC
passes VPFD on power-up.
40
80
120
ms
Data-retention time in
Absence of VCC
tDR
TA = 25℃
10
-
-
years
Write-protect time
tWPT
Delay after Vcc slews down
past VPFD before SRAM is
Write-protected.
40
100
150
㎲
TIMING WAVEFORM
- READ CYCLE NO.1 (Address Access)*1,2
- READ CYCLE NO.2 (/CE Access)*1,3,4
Address
DOUT
Data Valid
tOH
tACC
tRC
Previous Data Valid
tACE
tCLZ
tRC
tCHZ
/CE
High-Z
High-Z
DOUT



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