©2012 Silicon Storage Technology, Inc.

DS25023B

06/13

12

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39LF010 / SST39LF020 / SST39LF040

SST39VF010 / SST39VF020 / SST39VF040

Data Sheet

Table 8: DC Operating Characteristics -VDD = 3.0-3.6V for SST39LF010/020/040 and 2.7-

3.6V for SST39VF010/020/0401

Symbol

Parameter

Limits

Test Conditions

Min

Max

Units

IDD

Power Supply Current

Address input=VILT/VIHT, at f=1/TRC Min

VDD=VDD Max

Read2

20

mA

CE#=VIL, OE#=WE#=VIH, all I/Os open

Program and Erase3

30

mA

CE#=WE#=VIL, OE#=VIH

ISB

Standby VDD Current

15

µA

CE#=VIHC, VDD=VDD Max

ILI

Input Leakage Current

1

µA

VIN=GND to VDD, VDD=VDD Max

ILO

Output Leakage Current

10

µA

VOUT=GND to VDD, VDD=VDD Max

VIL

Input Low Voltage

0.8

V

VDD=VDD Min

VIH

Input High Voltage

0.7VDD

VVDD=VDD Max

VIHC

Input High Voltage (CMOS)

VDD-0.3

V

VDD=VDD Max

VOL

Output Low Voltage

0.2

V

IOL=100 µA, VDD=VDD Min

VOH

Output High Voltage

VDD-0.2

V

IOH=-100 µA, VDD=VDD Min

T8.7 25023

1. Typical conditions for the Active Current shown on the front data sheet page are average values at 25°C

(room temperature), and VDD = 3V for VF devices. Not 100% tested.

2. Values are for 70 ns conditions. See the Multi-Purpose Flash Power Rating application note for further information.

3. 30 mA max for Erase operations in the industrial temperature range.

Table 9: Recommended System Power-up Timings

Symbol

Parameter

Minimum

Units

TPU-READ1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this

parameter.

Power-up to Read Operation

100

µs

TPU-WRITE1

Power-up to Program/Erase Operation

100

µs

T9.1 25023

Table 10: Capacitance (Ta = 25°C, f=1 Mhz, other pins open)

Parameter

Description

Test Condition

Maximum

CI/O1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this

parameter.

I/O Pin Capacitance

VI/O = 0V

12 pF

CIN1

Input Capacitance

VIN = 0V

6 pF

T10.0 25023

Table 11: Reliability Characteristics

Symbol

Parameter

Minimum Specification

Units

Test Method

NEND1,2

1. This parameter is measured only for initial qualification and after a design or process change that could affect this

parameter.

2. NEND endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating

would result in a higher minimum specification.

Endurance

10,000

Cycles

JEDEC Standard A117

TDR1

Data Retention

100

Years

JEDEC Standard A103

ILTH1

Latch Up

100 + IDD

mA

JEDEC Standard 78

T11.3 25023