| Datenblatt-Suchmaschine für elektronische Bauteile |
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WTC6401 Datenblatt(PDF) 1 Page - Weitron Technology |
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WTC6401 Datenblatt(HTML) 1 Page - Weitron Technology |
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1 / 6 page ![]() WEITRON http:www.weitron.com.tw DRAIN CURRENT -4.3 AMPERES DRAIN SOURCE VOLTAGE -12 VOLTAGE Features: *Super High Dense Cell Design For Low RDS(ON) RDS(ON)<50mΩ@VGS=-4.5V *Rugged and Reliable *Simple Drive Requirement *Fast Switching *SOT-23 Package Applications *Power Management in Notebook Computer *Portable Equipment *Battery Powered System Maximum Ratings(T A=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage ,(TA=25˚C) ,(TA=70˚C) VDS -12 V Gate-Source Voltage VGS ± 8 Continuous Drain Current 3 -4.3 I D -3.4 Pulsed Drain Current 1 I DM -12 A Total Power Dissipation(T A=25 ) PD 1.38 W Maximum Thermal Resistace Junction-ambient 3 RθJA 90 ˚C/W Operating Junction and Storage Temperature Range TJ, Tstg - 55~+150 ˚C Device Marking WTC6401=6401 WTC6401 P-Channel Enhancement Mode Power MOSFET ˚C 1 2 3 GATE SOURCE DRAIN SOT-23 1 2 3 1/6 06-May-05 |
Ähnliche Teilenummer - WTC6401 |
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Ähnliche Beschreibung - WTC6401 |
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