WTC6401 datasheet(2/6 Pages) WEITRON

Teilenummer	WTC6401

Bauteilbeschribung	P-Channel Enhancement Mode Power MOSFET

PDF	6 Pages

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Hersteller	WEITRON [Weitron Technology]

Direct Link	http://www.weitron.com.tw

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Electrical Characteristics(T

A = 25℃ Unless otherwise noted)

Characteristic

Symbol Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS=0,ID=-250μA

BV DSS

-12

Gate-Source Threshold Voltage

VDS=VGS,ID=-250μA

VGS(Th)

-1.0

Gate-Source Leakage current

VGS= ±8V

IGSS

±100

-1

Drain-Source Leakage Current(Tj=25˚C)

VDS=-16V,VGS =0

Drain-Source Leakage Current(Tj=70˚C)

VDS=-12V,VGS =0

IDSS

-25

μA

Drain-Source On-Resistance 2

VGS=-4.5V,I D=-4.3A

VGS=-2.5V,I D=-2.5A

VGS=-1.8V,I D=-2.0A

RDS(o n)

125

mΩ

Forward Transconductance

VDS=-5.0,I D=-4.0A

gfs

Dynamic

Input Capacitance

VGS=0V,VDS=-15V,f=1.0MHz

Ciss

985

1580

Output Capacitance

VGS=0V,VDS=-15V,f=1.0MHz

Coss

180

Reverse Transfer Capacitance

VGS=0V,VDS=-15V,f=1.0MHz

Crss

160

2/6

06-May-05

WTC6401

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