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M25PE80-VMP6TP Datenblatt(PDF) 38 Page - STMicroelectronics

Teilenummer M25PE80-VMP6TP
Bauteilbeschribung  8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout
PDF  61 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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M25PE80-VMP6TP Datenblatt(HTML) 38 Page - STMicroelectronics

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Instructions
M25PE80
38/61
6.12
Page Erase (PE)
The Page Erase (PE) instruction sets to 1 (FFh) all bits inside the chosen page. Before it can
be accepted, a Write Enable (WREN) instruction must previously have been executed. After
the Write Enable (WREN) instruction has been decoded, the device sets the Write Enable
Latch (WEL).
The Page Erase (PE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code, and three address Bytes on Serial Data Input (D). Any address inside the
Page is a valid address for the Page Erase (PE) instruction. Chip Select (S) must be driven
Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 18.
Chip Select (S) must be driven High after the eighth bit of the last address Byte has been
latched in, otherwise the Page Erase (PE) instruction is not executed. As soon as Chip
Select (S) is driven High, the self-timed Page Erase cycle (whose duration is tPE) is initiated.
While the Page Erase cycle is in progress, the Status Register may be read to check the
value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-
timed Page Erase cycle, and is 0 when it is completed. At some unspecified time before the
cycle is complete, the Write Enable Latch (WEL) bit is reset.
A Page Erase (PE) instruction applied to a page that is Hardware or software Protected is
not executed.
Any Page Erase (PE) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
If Reset (Reset) is driven Low while a Page Erase (PE) cycle is in progress, the Page Erase
cycle is interrupted and the programmed data may be corrupted (see Table 15: Device
status after a Reset Low pulse). On Reset going Low, the device enters the Reset mode and
a time of tRHSL is then required before the device can be re-selected by driving Chip Select
(S) Low. For the value of tRHSL see Table 24: Timings after a Reset Low pulse in Section 11:
DC and AC parameters.
Figure 18.
Page Erase (PE) instruction sequence
1.
Address bits A23 to A20 are Don’t Care.
24 Bit Address
C
D
AI04046
S
2
1
3456789
29 30 31
Instruction
0
23 22
2
0
1
MSB



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