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STM32G0C1NET3 Datenblatt(PDF) 81 Page - STMicroelectronics

Teilenummer STM32G0C1NET3
Bauteilbeschribung  Arm® Cortex®-M0 32-bit MCU, up to 512KB Flash, 144KB RAM,6x USART, timers, ADC, DAC, comm. I/Fs, AES, RNG, 1.7-3.6V
PDF  159 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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STM32G0C1NET3 Datenblatt(HTML) 81 Page - STMicroelectronics

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DS13564 Rev 4
81/159
STM32G0C1xC/xE
Electrical characteristics
124
5.3.6
Wakeup time from low-power modes and voltage scaling
transition times
The wakeup times given in Table 37 are the latency between the event and the execution of
the first user instruction.
Table 37. Low-power mode wakeup times(1)
Symbol
Parameter
Conditions
Typ
Max
Unit
tWUSLEEP
Wakeup time from
Sleep to Run
mode
-11
11
CPU
cycles
tWULPSLEEP
Wakeup time from
Low-power sleep
mode
Transiting to Low-power-run-mode execution in Flash
memory not powered in Low-power sleep mode;
HCLK = HSI16 / 8 = 2 MHz
11
14
tWUSTOP0
Wakeup time from
Stop 0
Transiting to Run-mode execution in Flash memory not
powered in Stop 0 mode;
HCLK = HSI16 = 16 MHz;
Regulator in Range 1 or Range 2
5.6
6
µs
Transiting to Run-mode execution in SRAM or in Flash
memory powered in Stop 0 mode;
HCLK = HSI16 = 16 MHz;
Regulator in Range 1 or Range 2
22.4
tWUSTOP1
Wakeup time from
Stop 1
Transiting to Run-mode execution in Flash memory not
powered in Stop 1 mode;
HCLK = HSI16 = 16 MHz;
Regulator in Range 1 or Range 2
9.0
11.2
µs
Transiting to Run-mode execution in SRAM or in Flash
memory powered in Stop 1 mode;
HCLK = HSI16 = 16 MHz;
Regulator in Range 1 or Range 2
57.5
Transiting to Low-power-run-mode execution in Flash
memory not powered in Stop 1 mode;
HCLK = HSI16/8 = 2 MHz;
Regulator in low-power mode (LPR = 1 in PWR_CR1)
22
25.3
Transiting to Low-power-run-mode execution in SRAM or
in Flash memory powered in Stop 1 mode;
HCLK = HSI16 / 8 = 2 MHz;
Regulator in low-power mode (LPR = 1 in PWR_CR1)
18
23.5
tWUSTBY
Wakeup time from
Standby mode
Transiting to Run mode;
HCLK = HSI16 = 16 MHz;
Regulator in Range 1
14.5
30
µs



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