STM32G0C1NET3 datasheet(93/159 Pages) STMICROELECTRONICS

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DS13564 Rev 4

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STM32G0C1xC/xE

Electrical characteristics

124

5.3.12

Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the ANSI/JEDEC standard.

Static latch-up

Two complementary static tests are required on six parts to assess the latch-up

performance:

•

A supply overvoltage is applied to each power supply pin.

•

A current is injected to each input, output and configurable I/O pin.

These tests are compliant with EIA/JESD 78A IC latch-up standard.

Table 51. EMI characteristics

Symbol

Parameter

Conditions

Monitored

frequency band

Max vs.

[fHSE/fHCLK]

Unit

8 MHz / 64 MHz

SEMI

Peak level

VDD = 3.6 V, TA = 25 °C,

LQFP100 package

compliant with IEC 61967-2

0.1 MHz to 30 MHz

dBµV

30 MHz to 130 MHz

130 MHz to 1 GHz

1 GHz to 2 GHz

EMI level

2.5

Table 52. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Class

Maximum

value(1)

Unit

VESD(HBM)

Electrostatic discharge voltage

(human body model)

TA = +25 °C, conforming to

ANSI/ESDA/JEDEC JS-001

2000

VESD(CDM)

Electrostatic discharge voltage

(charge device model)

TA = +25 °C, conforming to

ANSI/ESDA/JEDEC JS-002

C2a

250

1. Based on characterization results, not tested in production.

Table 53. Electrical sensitivity

Symbol

Parameter

Conditions

Class

Static latch-up class

TA = +125 °C conforming to JESD78

II Level A

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