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2N7002L-AE3-R Datenblatt(PDF) 4 Page - Unisonic Technologies

Teilenummer 2N7002L-AE3-R
Bauteilbeschribung  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  6 Pages
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Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2N7002L-AE3-R Datenblatt(HTML) 4 Page - Unisonic Technologies

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2N7002
MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4
www.unisonic.com.tw
QW-R206-037,B
TYPICAL CHARACTERICS
05
4
3
2
1
1.5
1
0.5
0
2
3.0V
2
1.6
1.2
0.8
0.4
VGS=4.0V
3
2.5
2
1.5
1
0
0.5
DRAIN - SOURCE VOLTAGE, VDS (V)
VGS=10V
4.0V
5.0V
6.0V
7.0V
8.0V
9.0V
Figure 3. On-Region Characteristics
DRAIN CURRENT, ID (A)
Figure 4. On-Resistance Varisation with Gate
Voltage and Drain Current
4.5V
5.0V
6.0V
7.0V
8.0V
9.0V
10V
100
75
0
-25
2
1.5
1
-50
0.5
1.6
1.2
0.8
0.4
VGS=10V
3
2.5
2
1.5
1
0
0.5
25
50
150
125
0.75
1.25
1.75
2
0
TJ =125℃
25℃
JUCTION TEMPERATURE, TJ (°C)
Figure 5. On-Resistance Varisation
with Temperature
VGS=10V
ID=500mA
DRAIN CURRENT,ID (A)
Figure 6. On-Resistance Varisation with Drain
Current and Temperature
0
10
8
6
4
2
100
75
0
-25
-50
25
50
125
1.6
1.2
1.8
0.4
2
0
150
1.1
1.05
1
0.95
0.9
0.85
0.8
GATE TO SOURCE VOLTAGE , VGS (V)
Figure 7. Transfer Characteristics
VDS=10V
25℃
125℃
JUCTION TEMPERATURE, TJ (°C)
Figure 8. Gate Threshold Varisation
with Temperature
VGS = VDS
ID = 1mA



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