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2N7002L-AE3-R Datenblatt(PDF) 1 Page - Unisonic Technologies |
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2N7002L-AE3-R Datenblatt(HTML) 1 Page - Unisonic Technologies |
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1 / 6 page ![]() UNISONIC TECHNOLOGIES CO., 2N7002 MOSFET www.unisonic.com.tw 1 Copyright © 2005 Unisonic Technologies Co., QW-R206-037,B N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications FEATURES * High density cell design for low RDS(ON). * Voltage controlled small signal switch * Rugged and reliable * High saturation current capability MARKING 3P SOT-23 1 2 3 *Pb-free plating product number: 2N7002L PIN CONFIGURATION PIN NO. PIN NAME 1 SOURCE 2 GATE 3 DRAIN ORDERING INFORMATION Order Number Normal Lead free Package Packing 2N7002-AE3-R 2N7002L-AE3-R SOT-23 Tape Reel |
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