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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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AM29LV320ML112REF Datenblatt(PDF) 58 Page - SPANSION |
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AM29LV320ML112REF Datenblatt(HTML) 58 Page - SPANSION |
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58 / 59 page  56 Am29LV320MH/L December 14, 2005 DA TA SH EET REVISION SUMMARY Revision A (May 30, 2002) Initial release as Advance Information data sheet. Revision A+1 (September 3, 2002) Mirrorbit 32 Mbit Device Family Changed the 48-pin TSOP to 40-pin TSOP. Alternate CE# Controlled Erase and Program Operations Added t RH parameter to table. Erase and Program Operations Added tBUSY parameter to table. Figure 16. Program Operation Timings Added RY/BY# to waveform. TSOP and BGA PIN Capacitance Added the FBGA package. Program Suspend/Program Resume Command Sequence Changed 15 μs typical to maximum and added 5 μs typical. Erase Suspend/Erase Resume Commands Changed typical from 20 μs to 5 μs and added a maxi- mum of 20 μs. Product Selector Guide Added Note 2. Ordering Information Added 101R, 112R, and 120R to Valid Combinations Table. Added Note 1. Read-Only Operations Alternate CE# Controlled Erase and Program Operations Erase and Program Operations Added 101R, 112R, and 120R to Speed Options. Revision A+2 (November 15, 2002) Customer Lockable: SecSi Sector NOT Programmed or Protected At the Factory Added second bullet and figure Product Selector Guide and Read-Only Operations Added 30 ns to the 112R and 120R to Max page ac- cess time and Max OE# Access time. Changed the Chip Enable to Output High Z and Out- put Enable to Output High Z to 16 ns. Byte/Word Program Command Sequence, Sector Erase Command Sequence, and Chip Erase Com- mand Sequence Noted that the SecSi Sector, autoselect, and CFI functions are unavailable when a program or erase operation is in progress. Common Flash Memory Interface (CFI) Changed CFI website address. CMOS Compatable Added ILR parameter symbol to table. Removed VIL, VIH, VOL, and VOH and replaced with VIL, VIH, VOL, VOH1 and VOH2. Clarified note #5. Removed note #6. Read-Only Operations Added note #3. Absolute Maximum Rating Changed the Ambient Temperature with Power Ap- plied from –55 °C to +125°C to –65°C to +125°C. Revision A+3 (February 14, 2003) Distinctive Characteristics Corrected performance characteristics. AC Characteristics Added Note Input values in the t WHWH1 and tWHWH2 parameters in the Erase and Program Options table that were previ- ously TBD. Also added notes 5 and 6. Input values in the t WHWH1 and tWHWH2 parameters in the Alternate CE# Controlled Erase and Program Op- tions table that were previously TBD. Also added notes 5 and 6. Erase and Programming Performance Input values into table that were previously TBD. Added note 3 and 4. Revision B (May 7, 2003) Distinctive Characteristics Added typical active read current Global Converted to full datasheet version. Modified SecSi Sector Flash Memory Region section to include ESN references. |
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