3

HT6256

VDD

Supply Voltage Range (2)

-0.5

6.5

V

VPIN

Voltage on Any Pin (2)

-0.5

VDD+0.5

V

TSTORE

Storage Temperature (Zero Bias)

-65

325

°C

TSOLDER

Soldering Temperature (5 Seconds)

355

°C

PD

Maximum Power Dissipation (3)

2

W

IOUT

DC or Average Output Current

25

mA

VPROT

ESD Input Protection Voltage (4)

2000

V

28 DIP

10

Parameter

Symbol

Parameter

Max

Symbol

Test Conditions

Worst Case

Units

CAPACITANCE (1)

Symbol

Test Conditions

Min

Max

Typical

Units

500

µA

NCS=VDD=2.5V, VI=VDD or VSS

330

µA

NCS=VDD=3.0V, VI=VDD or VSS

VDR

Data Retention Voltage

2.5

V

IDR

Data Retention Current

NCS=VDR

VI=VDR or VSS

Thermal Resistance (Jct-to-Case)

(1) This parameter is tested during initial design characterization only

(2) Typical operating conditions: TA= 25

°C.

RECOMMENDED OPERATING CONDITIONS

Symbol

Max

Typ

Description

Parameter

Min

Worst Case

°C/W

Units

VDD

Supply Voltage (referenced to VSS)

4.5

5.0

5.5

V

TA

Ambient Temperature

-55

25

225

°C

VPIN

Voltage on Any Pin (referenced to VSS)

-0.3

VDD+0.3

V

Min

Typical

(2)

CI

Input Capacitance

5

7

pF

VI=VDD or VSS, f=1 MHz

CO

Output Capacitance

7

9

pF

VIO=VDD or VSS, f=1 MHz

Units

Rating

Min

Max

(1) Operating conditions: TA= -55

°C to +125°C.

DATA RETENTION CHARACTERISTICS (1)

Parameter

ABSOLUTE MAXIMUM RATINGS (1)

(1) Stresses in excess of those listed above may result in permanent damage. These are stress ratings only, and operation at these levels is not

implied. Frequent or extended exposure to absolute maximum conditions may affect device reliability.

(2) Voltage referenced to VSS.

(3) RAM power dissipation (IDDSB + IDDOP) plus RAM output driver power dissipation due to external loading must not exceed this specification.

(4) Class 2 electrostatic discharge (ESD) input protection. Tested per MIL-STD-883, Method 3015 by DESC certified lab.