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HT6256 Datenblatt(PDF) 5 Page - Honeywell Solid State Electronics Center

Teilenummer HT6256
Bauteilbeschribung  HIGH TEMPERATURE 32K x 8 STATIC RAM
PDF  8 Pages
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Hersteller  HONEYWELL [Honeywell Solid State Electronics Center]
Direct Link  http://honeywell.com/Pages/Home.aspx
Logo HONEYWELL - Honeywell Solid State Electronics Center

HT6256 Datenblatt(HTML) 5 Page - Honeywell Solid State Electronics Center

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HT6256
READ CYCLE AC TIMING CHARACTERISTICS (1)
(1) Test conditions: input switching levels VIL/VIH=0.5V/VDD-0.5V, input rise and fall times <1 ns/V, input and output timing reference levels
shown in the Tester AC Timing Characteristics table, capacitive output loading C
L >50 pF, or equivalent capacitive output loading CL=5 pF for
TSHQZ and TGHQZ. For C
L >50 pF, derate access times by 0.02 ns/pF (typical).
(2) Typical operating conditions: VDD=5.0 V, TA=25
°C.
(3) Worst case operating conditions: VDD=4.5 V to 5.5 V, -55 to 225
°C.
(4) External control of Chip Enable (CE) is available only in other package options.
Symbol
Parameter
Typical (2)
Worst Case (3)
Units
Min
Max
TAVAVR
Address Read Cycle Time
50
ns
TAVQV
Address Access Time
50
ns
TAXQX
Address Change to Output Invalid Time
3
ns
TSLQV
Chip Select Access Time
50
ns
TSLQX
Chip Select Output Enable Time
5
ns
TSHQZ
Chip Select Output Disable Time
20
ns
TGLQV
Output Enable Access Time
15
ns
TGLQX
Output Enable Output Enable Time
0
ns
TGHQZ
Output Enable Output Disable Time
15
ns
TEHQV
Chip Enable Output Access Time (4)
17
25
ns
TEHQX
Chip Enable Output enable Time (4)
10
5
ns
TELQZ
Chip Enable Output Disable Time (4)
4
10
ns
HIGH
IMPEDANCE
NCS
NOE
DATA VALID
CE
TAVAVR
TAVQV
TAXQX
TSLQV
TSLQX
TSHQZ
TEHQX
TEHQV
TGLQX
TGLQV
TGHQZ
TELQZ
ADDRESS
(NWE = high)
DATA OUT



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