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ISCNH360W Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISCNH360W Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor ISCNH360W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 650 -- -- V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 3.0 -- 5.0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=36A -- -- 0.044 Ω RG Gate Resistance f = 1.0MHz open drain -- 0.3 -- Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 -- -- ± 100 nA IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 -- -- 10 uA Dynamic Characteristics Ciss Input Capacitance VGS = 0V, VDS = 100V, f = 1.0MHz -- 7837 -- pF Coss Output Capacitance -- 221 -- Crss Reverse Transfer Capacitance -- 13.2 -- Qg Total Gate Charge VDD = 520V, ID = 50A, VGS = 10V -- 165 -- nC Qgs Gate-Source Charge -- 50 -- Qgd Gate-Drain Charge -- 70 -- td(on) Turn-on Delay Time VDD = 400V, ID = 50A, RG = 25Ω -- 103 -- ns tr Turn-on Rise Time -- 83 -- td(off) Turn-off Delay Time -- 543 -- tf Turn-off Fall Time -- 93 -- |
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