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3

isc N-Channel MOSFET Transistor

ISCNH360W

Drain-Source Body Diode Characteristics

VSD

Forward On-Voltage

IS=36A; VGS= 0

--

1.0

1.5

V

trr

Reverse Recovery Time

VR = 400V, IF = 36A,

diF /dt = 100A/μs

--

1.0

--

ns

Qrr

Reverse Recovery Charge

--

1.45

--

μC

Irrm

Peak Reverse Recovery Current

--

12

--

A

TC=25℃ unless otherwise specified

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notification. The information contained herein is presented only as a guide for the applications of

our products.

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