BSP89 datasheet(3/8 Pages) PHILIPS

3 / 8 page

April 1995

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode vertical

D-MOS transistor

BSP89

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX. UNIT

V(BR)DSS

drain-source breakdown voltage

ID = 10 µA; VGS = 0

240

−−

IDSS

drain-source leakage current

VDS = 60 V; VGS = 0

−−

200

±I

GSS

gate-source leakage current

±VGS = 20 V; VDS = 0

−−

100

VGS(th)

gate-source threshold voltage

ID = 1 mA; VGS = VDS

0.8

−

RDS(on)

drain-source on-resistance

ID = 340 mA; VGS = 10 V

−

Ω

ID = 340 mA; VGS = 4.5 V

−−

Ω

 Yfs

transfer admittance

ID = 340 mA; VDS = 25 V

140

350

−

Ciss

input capacitance

VDS = 25 V; VGS = 0; f = 1 MHz

−

140

Coss

output capacitance

VDS = 25 V; VGS = 0; f = 1 MHz

−

Crss

feedback capacitance

VDS = 25 V; VGS = 0; f = 1 MHz

−

59pF

Switching times (see Figs 3 and 4)

ton

turn-on time

ID = 250 mA; VDD = 50 V;

VGS = 0 to 10 V

−

510

toff

turn-off time

ID = 250 mA; VDD = 50 V;

VGS = 0 to 10 V

−

Fig.2 Power derating curve.

handbook,

100

200

1.6

150

1.2

0.8

0.4

MBB693

Ptot

(W)

Tamb (°C)

Fig.3 Switching times test circuit.

handbook, halfpage

MBB691

Ω

VDD = 50 V

10 V

0 V

BSP89 Datenblatt(PDF) 3 Page - NXP Semiconductors

BSP89 Datenblatt(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

Datenblatt Download

Link URL