BST76 datasheet(2/12 Pages) PHILIPS

2 / 12 page

1997 Jun 20

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode

vertical D-MOS transistor

BST76A

FEATURES

• Direct interface to C-MOS, TTL, etc.

• High-speed switching

• No secondary breakdown.

APPLICATIONS

• Line current interrupter in telephone sets

• Relay, high-speed and line transformer drivers.

DESCRIPTION

N-channel enhancement mode vertical D-MOS transistor

in a SOT54 (TO-92) variant package.

PINNING - SOT54 (TO-92) variant

SYMBOL

DESCRIPTION

source

gate

drain

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM146

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

VDS

drain-source voltage (DC)

−

180

VDS(SM)

drain-source voltage

non-repetitive peak; tp ≤ 2mS

−

200

VGSO

gate-source voltage (DC)

open drain

−±20

drain current (DC)

−

300

Ptot

total power dissipation

Tamb ≤ 25 °C

−

RDSon

drain-source on-state resistance

ID = 15 mA; VGS =3V

Ω

yfs

forward transfer admittance

ID = 300 mA; VDS = 15 V

250

−

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