1997 Jun 20

3

Philips Semiconductors

Product specification

N-channel enhancement mode

vertical D-MOS transistor

BST76A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note to the Limiting values and Thermal characteristics

1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for drain lead minimum

10 mm

× 10 mm.

CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage (DC)

−

180

V

drain-source voltage

−

200

V

gate-source voltage (DC)

open drain

−±20

V

drain current (DC)

−

300

mA

peak drain current

−

800

mA

total power dissipation

−

1W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

note 1

125

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

drain-source breakdown voltage

180

−−

V

gate-source threshold voltage

0.7

−

2.4

V

drain-source leakage current

−−

10

µA

gate leakage current

−−±100 nA

drain-source on-state resistance

−

710

Ω

−

6

−Ω

forward transfer admittance

−

250

−

mS

input capacitance

−

50

65

pF

output capacitance

−

20

30

pF

reverse transfer capacitance

−

610

pF

Switching times (see Figs 2 and 3)

turn-on time

−−

10

ns

turn-off time

−−

15

ns