CGH40035F

2

Rev. 4.2, 2022-11-17

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The information in this document is subject to change without notice.

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Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter

Symbol

Rating

Units

Conditions

Drain-Source Voltage

VDSS

120

V

25ºC

Gate-to-Source Voltage

VGS

-10, +2

Storage Temperature

TSTG

-65, +150

ºC

Operating Junction Temperature

TJ

225

Maximum Forward Gate Current

IGMAX

10.0

mA

25ºC

Maximum Drain Current1

IDMAX

4.5

A

Soldering Temperature2

TS

245

ºC

Screw Torque

τ

40

in-oz

Thermal Resistance, Junction to Case3

RθJC

3.0

ºC/W

85ºC

Case Operating Temperature3, 4

TC

-40, +100

ºC

Electrical Characteristics (TC= 25˚C)

Characteristics

Symbol Min.

Typ.

Max.

Units Conditions

DC Characteristics1

Gate Threshold Voltage

VGS(th)

-3.8

-3.0

-2.3

VDC

VDS = 10 V, ID = 10.8 mA

Gate Quiescent Voltage

VGS(Q)

—

-2.7

—

VDS = 28 V, ID = 500 A

Saturated Drain Current

IDS

7.6

10.5

—

A

VDS = 6.0 V, VGS = 2.0 V

Drain-Source Breakdown Voltage

VBR

84

—

—

VDC

VGS = -8 V, ID = 10.8 mA

RF Characteristics2 (TC = 25˚C, F0 = 1.3 GHz unless otherwise noted)

Small Signal Gain

GSS

13

14

—

dB

VDD = 28 V, IDQ = 500 mA

Output Power3

PSAT

30

45

—

W

Drain Efficiency4

η

50

60

—

%

VDD = 28 V, IDQ = 500 mA, PSAT

Output Mismatch Stress

VSWR

—

—

10 : 1

Y

No damage at all phase angles,

VDD = 28 V, IDQ = 500 mA, POUT = 35 W CW

Dynamic Characteristics

Input Capacitance

CGS

—

14.7

—

pF

VDS = 28 V, VGS = -8 V, ƒ = 1 MHz

Output Capacitance

CDS

—

4.9

—

Feedback Capacitance

CGD

—

0.6

—

Notes:

1 Current limit for long term, reliable operation

2 Refer to the Application Note on soldering at wolfspeed.com/rf/document-library

3 Measured for the CGH40035F at PDISS = 42 W

4 See also, the Power Dissipation De-rating Curve on Page 6

Notes:

1 Measured on wafer prior to packaging

2 Measured in CGH40035F-AMP

3 PSAT is defined as IG = 1.08 mA

4 Drain Efficiency = POUT/PDC