BTA151 datasheet(2/6 Pages) PHILIPS

2 / 6 page

Philips Semiconductors

Product specification

Thyristors

BTA151 series

sensitive gate

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

th j-mb

Thermal resistance

1.3

K/W

junction to mounting base

th j-a

Thermal resistance

in free air

K/W

junction to ambient

STATIC CHARACTERISTICS

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Gate trigger current

D = 12 V; IT = 0.1 A

Latching current

D = 12 V; IGT = 0.1 A

Holding current

D = 12 V; IGT = 0.1 A

On-state voltage

T = 23 A

1.4

1.75

Gate trigger voltage

D = 12 V; IT = 0.1 A

0.6

1.5

D = VDRM(max); IT = 0.1 A; Tj = 125 ˚C

0.25

0.4

D, IR

Off-state leakage current

D = VDRM(max); VR = VRRM(max); Tj = 125 ˚C

0.1

0.5

DYNAMIC CHARACTERISTICS

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

D/dt

Critical rate of rise of

D = 67% VDRM(max); Tj = 125 ˚C;

off-state voltage

exponential waveform

Gate open circuit

130

µs

GK = 100 Ω

200

1000

µs

Gate controlled turn-on

TM = 40 A; VD = VDRM; IG = 0.1 A;

µs

time

G/dt = 5 A/µs

Circuit commutated

D = 67% VDRM(max); ITM = 20 A; VR = 25 V;

µs

turn-off time

TM/dt = 30 A/µs; dVD/dt = 50 V/µs;

GK = 100 Ω

September 1997

Rev 1.200

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