BTA151 datasheet(3/6 Pages) PHILIPS

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Philips Semiconductors

Product specification

Thyristors

BTA151 series

sensitive gate

Fig.1. Maximum on-state dissipation, P

tot, versus

average on-state current, I

T(AV), where

a = form factor = I

T(RMS)/ IT(AV).

Fig.2. Maximum permissible non-repetitive peak

on-state current I

TSM, versus pulse width tp, for

sinusoidal currents, t

p ≤ 10ms.

Fig.3. Maximum permissible rms current I

T(RMS) ,

versus mounting base temperature T

mb.

Fig.4. Maximum permissible non-repetitive peak

on-state current I

TSM, versus number of cycles, for

sinusoidal currents, f = 50 Hz.

Fig.5. Maximum permissible repetitive rms on-state

current I

T(RMS), versus surge duration, for sinusoidal

currents, f = 50 Hz; T

mb ≤ 109˚C.

Fig.6. Normalised gate trigger voltage

GT(Tj)/ VGT(25˚C), versus junction temperature Tj.

345

a = 1.57

1.9

2.2

2.8

BT151

IT(AV) / A

Ptot / W

Tmb(max) / C

125

118.5

112

105.5

conduction

angle

form

factor

degrees

120

180

2.8

2.2

1.9

1.57

100

1000

100

120

BT151

Number of half cycles at 50Hz

ITSM / A

ITSM

time

Tj initial = 25 C max

100

1000

BT151

10us

100us

1ms

10ms

T / s

ITSM / A

ITSM

time

Tj initial = 25 C max

dI /dt limit

0.01

0.1

BT151

surge duration / s

IT(RMS) / A

-50

100

150

BT151

Tmb / C

IT(RMS) / A

109 C

-50

100

150

0.4

0.6

0.8

1.2

1.4

1.6

BT151

Tj / C

VGT(Tj)

VGT(25 C)

September 1997

Rev 1.200

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