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MASTERGAN1TR Datenblatt(PDF) 17 Page - STMicroelectronics |
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MASTERGAN1TR Datenblatt(HTML) 17 Page - STMicroelectronics |
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17 / 27 page ![]() 6.5 Thermal shutdown The integrated gate driver has a thermal shutdown protection. When junction temperature reaches the TTSD temperature threshold, the device turns off both GaN transistors leaving the half-bridge in 3-state and signaling the state forcing SD/OD pin low. SD/OD pin is released when junction temperature is below TTSD-THYS and SD/OD is below VTSD. GaN are driven again according to inputs when SD/OD rises above Vih. The thermal smart shutdown system gives the possibility to increase the time constant of the external RC network (that determines the disable time after the overtemperature event) up to very large values without delaying the protection. Figure 18. Thermal shutdown timing waveform THERMAL SHUTDOWN CIRCUIT GH/GL OD gate (internal) Fast shut down the driver outputs are switched off disable time SD/OD TTSD THYS TTSD - Vih V 0 V TSD VOD TJ t1 t2 VPU SD/OD FROM / TO CONTROLLER COD THERMAL SHUTDOWN LOGIC RON_OD RPD_SD ROD_ext 2 1 immediately after overtemperature MASTERGAN1 Thermal shutdown DS13417 - Rev 3 page 17/27 |
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