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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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BAS70-08S Datenblatt(PDF) 1 Page - STMicroelectronics |
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BAS70-08S Datenblatt(HTML) 1 Page - STMicroelectronics |
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1 / 4 page  1/4 BAS70-07S / BAS70-08S ® December 2001 - Ed: 2A RF DETECTION DIODE s LOW DIODE CAPACITANCE s LOW SERIES INDUCTANCE AND RESISTANCE s SURFACE MOUNT PACKAGE FEATURES AND BENEFITS Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF application for signal detection and temperature compensation. DESCRIPTION SOT323-6L Symbol Parameter Value Unit VR Continuous reverse voltage 70 V IF Continuous forward current 70 mA IFRM Repetitive peak forward current 70 mA IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 1 A P Power Dissipation Ta = 55°C 250 mW Tstg Storage temperature range - 65 to +150 °C Tj Maximum junction temperature 150 °C TL Maximum temperature for soldering 260 °C ABSOLUTE RATINGS (limiting values) 1 2 3 6 5 4 BAS70-07S SCHEMATIC DIAGRAM 1 2 3 6 5 4 BAS70-08S SCHEMATIC DIAGRAM |
Ähnliche Teilenummer - BAS70-08S |
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Ähnliche Beschreibung - BAS70-08S |
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