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AS4CM4EOQ Datenblatt(PDF) 3 Page - Alliance Semiconductor Corporation

Teilenummer AS4CM4EOQ
Bauteilbeschribung  4M X 4 CMOS Quad CAS DRAM (EDO) family
PDF  16 Pages
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Hersteller  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4CM4EOQ Datenblatt(HTML) 3 Page - Alliance Semiconductor Corporation

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®
AS4C4M4EOQ
AS4C4M4E1Q
3/22/01; v.1.0
Alliance Semiconductor
P. 3 of 16
Logic block diagram for 4K refresh
Logic block diagram for 2K refresh
Recommended operating conditions
†V
IL min -3.0V for pulse widths less than 5 ns. Recommended operating conditions apply throughout this document unlesss otherwise specified.
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage
4C4M4EOQ
AS4C4M4E1Q
VCC
4.5
5.0
5.5
V
GND
0.0
0.0
0.0
V
Input voltage
4C4M4EOQ
AS4C4M4E1Q
VIH
2.4
–
VCC
V
VIL
–0.5†
–0.8
V
Ambient operating temperature
TA
070
°C
RAS clock
generator
4,194,304 × 4
Array
(16,777,216)
Sense amp
A0
A1
A2
A3
A4
A5
A6
A7
VCC
GND
A8
Column decoder
Data
I/O
buffers
OE
RAS
CAS
WE clock
generator
WE
I/O0 to I/O3
CAS clock
generator
A9
A10
A11
RAS clock
generator
4,194,304 × 4
Array
(16,777,216)
Sense amp
A0
A1
A2
A3
A4
A5
A6
A7
VCC
GND
A8
Column decoder
Substrate bias
generator
Data
I/O
buffers
OE
RAS
CAS
WE clock
generator
WE
I/O0 to I/O3
CAS clock
generator
A9
A10



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