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AS4CM4EOQ Datenblatt(PDF) 8 Page - Alliance Semiconductor Corporation

Teilenummer AS4CM4EOQ
Bauteilbeschribung  4M X 4 CMOS Quad CAS DRAM (EDO) family
PDF  16 Pages
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Hersteller  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4CM4EOQ Datenblatt(HTML) 8 Page - Alliance Semiconductor Corporation

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AS4C4M4EOQ
AS4C4M4E1Q
®
3/22/01; v.1.0
Alliance Semiconductor
P. 8 of 16
Hyper page mode cycle
Output enable
Self-refresh cycle
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
tCPWD
CAS precharge to WE delay time
45
52
ns
tCPA
Access time from CAS precharge
28
35
ns
13
tRASP
RAS pulse width
50
100K
60
100K
ns
tDOH
Previous data hold time from CAS
5–
5–
ns
tREZ
Output buffer turn off delay from RAS
0
13
0
15
ns
tWEZ
Output buffer turn off delay from WE
0
13
0
15
ns
tOEZ
Output buffer turn off delay from OE
0
13
0
15
ns
tHPC
Hyper page mode cycle time
20
25
ns
tHPRWC
Hyper page mode RMW cycle
47
56
ns
tRHCP
RAS hold time from CAS
30
35
ns
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
tCLZ
CAS to output in Low Z
0
0
ns
8
tROH
RAS hold time referenced to OE
8–
10
ns
tOEA
OE access time
13
15
ns
tOED
OE to data delay
13
15
ns
tOEZ
Output buffer turnoff delay from OE
0
13
0
15
ns
8
tOEH
OE command hold time
10
10
ns
tOLZ
OE to output in Low Z
0
0
ns
tOFF
Output buffer turn-off time
0
13
0
15
ns
8,10
Std
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
tRASS
RAS pulse width
(CBR self refresh)
100
100
µs
tRPS
RAS precharge time
(CBR self refresh)
90
105
ns
tCHS
CAS
hold time
(CBR self refresh)
-50
-50
ns



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