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S8C5H30L Datenblatt(PDF) 1 Page - STMicroelectronics |
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S8C5H30L Datenblatt(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() January 2007 Rev 3 1/14 14 STS8C5H30L N-channel 30V - 0.018 Ω - 8A/P-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET™ III MOSFET General features ■ Conduction losses reduced ■ Switching losses reduced ■ Low threshold drive ■ Standard outline for easy automated surface mount assembly Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications ■ Switching application Internal schematic diagram Type VDSS RDS(on) ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A S0-8 SO-8 www.st.com Order codes Part number Marking Package Packaging STS8C5H30L S8C5H30L SO-8 Tape & reel |
Ähnliche Teilenummer - S8C5H30L |
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Ähnliche Beschreibung - S8C5H30L |
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