S8C5H30L datasheet(5/14 Pages) STMICROELECTRONICS

Teilenummer	S8C5H30L

Bauteilbeschribung	N-channel 30V - 0.018 ohm - 8A/P-channel 30V - 0.045 ohm - 5A - SO-8 Low gate charge STripFET III MOSFET

PDF	14 Pages

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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STS8C5H30L

Electrical characteristics

5/14

Table 5.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Rise time

N-channel

VDD = 15V, ID = 4A

RG=4.7 Ω, VGS = 4.5V

P-channel

VDD = 15V, ID = 2A

RG=4.7 Ω, VGS = 4.5V

(see Figure 25)

n-ch

p-ch

n-ch

p-ch

14.5

td(off)

Turn-off delay time

Fall time

N-channel

VDD = 15V, ID = 4A

RG=4.7 Ω, VGS = 4.5V

P-channel

VDD = 15V, ID = 2A

RG=4.7 Ω, VGS = 4.5V

(see Figure 25)

n-ch

p-ch

n-ch

p-ch

125

Table 6.

Source drain diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

ISD

Source-drain current

n-ch

p-ch

ISDM

(1)

Pulse width limited by safe operating area.

Source-drain current

(pulsed)

n-ch

p-ch

VSD

(2)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 8A, VGS = 0

ISD = 5A, VGS = 0

n-ch

p-ch

1.5

1.2

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

N-channel

ISD = 8A, di/dt = 100A/µs

VDD=15 V,Tj =150

P-channel

ISD = 5 A, di/dt = 100A/µs

VDD=15 V, Tj =150

(see Figure 27)

n-ch

p-ch

n-ch

p-ch

n-ch

p-ch

5.7

0.76

1.6

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