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BTB26 Datenblatt(PDF) 5 Page - STMicroelectronics |
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BTB26 Datenblatt(HTML) 5 Page - STMicroelectronics |
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5 / 10 page ![]() Figure 7. Relative variation of gate trigger current, holding and latching current versus junction temperature (typical values) 0.0 0.5 1.0 1.5 2.0 2.5 -40 -20 0 20 40 60 80 100 120 Tj(°C) IGT, IH, IL [Tj] / IGT, IH, IL [Tj = 25 °C] IGT IH & IL Figure 8. Relative variation of critical rate of decrease of main current versus (dV/dt) (typical values) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0.1 1.0 10.0 100.0 (dV/dt) (V/µs) (dI/dt)c [(dV/dt)c] / specified (dI/dt)c BTB26 BTA26 Figure 9. Relative variation of critical rate of decrease of main current versus junction temperature 0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 (dI/dt)c [Tj ] / (dI/dt)c [Tj = 125 °C] Tj(°C) Figure 10. Relative variation of leakage current versus junction temperature for different values of blocking voltage 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 -40 -20 0 20 40 60 80 100 120 IDRM (mA) VD = VDRM, VR = VRRM Tj (°C) IRRM / BTA26, BTB26 Characteristics (curves) DS13701 - Rev 1 page 5/10 |
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