| Datenblatt-Suchmaschine für elektronische Bauteile |
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BTB26 Datenblatt(PDF) 4 Page - STMicroelectronics |
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BTB26 Datenblatt(HTML) 4 Page - STMicroelectronics |
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4 / 10 page ![]() 1.1 Characteristics (curves) Figure 1. Maximum power dissipation versus on-state RMS current (full cycle) P(W) 0 5 10 15 20 25 30 0 5 10 15 20 25 T(RMS) I (A) Figure 2. RMS on-state current versus case temperature (full cycle) 0 5 10 15 20 25 30 0 25 50 75 100 125 IT(RMS) (A) BTA26 BTB26 TC (°C) Figure 3. Relative variation of thermal impedance versus pulse duration 1.E-03 1.E-02 1.E-01 1.E+00 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 .. K=[Zth/Rth] tp(s) Zth(j-a) Zth(j-a) Figure 4. On-state characteristics (maximum values) 1 10 100 1000 0.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1.0 ITM(A) VTM (V) Tj = 25°C. T max. V = 0.85V j to R = 16 m d Ω j T = 150 °C Figure 5. Surge peak on-state current versus number of cycles 0 50 100 150 200 250 300 1 10 100 1000 Number of cycles ITSM (A) Number of cycles t=20ms One cycle Non repetitive Tj initial=25°C Repetitive TC= 100 °C Figure 6. Non-repetitive surge peak on-state current for a sinusoidal pulse with width tP < 10 ms 100 1000 10000 0.01 0.10 1.00 10.00 tP(ms) ITSM(A), I²t (A²s) tp(ms) j T initial=25 °C ITSM dI/dt limitation: 50A/µs BTA26, BTB26 Characteristics (curves) DS13701 - Rev 1 page 4/10 |
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