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CC1010-RTR1 Datenblatt(PDF) 7 Page - Texas Instruments

Teilenummer CC1010-RTR1
Bauteilbeschribung  Single Chip Very Low Power RF Transceiver with 8051-Compatible Microcontroller
PDF  152 Pages
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Hersteller  TI [Texas Instruments]
Direct Link  http://www.ti.com
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CC1010-RTR1 Datenblatt(HTML) 7 Page - Texas Instruments

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CC1010
SWRS047
Page 7 of 152
5. Electrical Specifications
Tc = 25
°C, VDD = 3.3 V if nothing else stated
All electrical specifications are measured on Chipcon’s CC1010EM reference design.
Parameter
Min.
Typ.
Max.
Unit
Condition
Power on reset (POR) voltage
2.7
2.9
3.1
V
Tc = -40 to 85°C
Brown out voltage
2.7
2.9
3.1
V
Tc = -40 to 85°C
RTC start-up time
160
ms
Current consumption MCU,
Active mode
14.8
1.3
mA
mA
14.7456 MHz, main oscillator
32 kHz, RTC oscillator
See page 33 for explanation
of modes. See Figure 1 page
6 for supply current vs. clock
frequency
Current consumption MCU, Idle
mode
12.8
29.4
mA
µA
14.7456 MHz, main oscillator
32 kHz, RTC oscillator
Current consumption, Power
Down mode
0.2
1
µA
Current consumption, Power-
on reset circuit (when enabled)
34
uA
Current consumption Main
crystal oscillator
67
µA
14.7456 MHz crystal
Current consumption RF
Transceiver, Receive mode,
433/868 MHz
9.1/
11.9
mA
Current for RF transceiver
alone
Current consumption RF
Transceiver, Transmit mode,
433/868 MHz
P=0.01 mW (-20 dBm)
P=0.3 mW (-5 dBm)
P=1 mW (0 dBm)
P=2.5 mW (4 dBm)
P=10 mW (10 dBm)
5.3/8.6
8.9/13.8
10.4/17
24.8/
23.5
26.6/NA
mA
mA
mA
mA
mA
The output power is delivered
to a single-ended 50
Ω load,
see also page 123. Current is
for RF transceiver alone
32 kHz oscillator crystal load
capacitance
12
pF
Table 4. Electrical specifications



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