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ISG2012 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer ISG2012
Bauteilbeschribung  Trench gate Field-Stop IGBT
PDF  3 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISG2012 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISG2012
eq STGW40H120DF2
Trench gate Field-Stop IGBT
www.iscsemi.com
2023-10-16
1
DESCRIPTION
·
Low Saturation Voltage:VCE(sat)=2.1V@IC=40A
·
High Current Capability
·
High Input Impedance
·
Very fast recovery antiparallel diode
APPLICATIONS
·
Uninterruptible power supply
·
Welding machines
·
Photovoltaic inverters
·
High frequency converters
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1200
V
VGES
Gate-Emitter Voltage
±
20
V
IC
Collector Current-Continuous
@ TC=25℃
80
A
IC
Collector Current-Continuous
@ TC=100℃
40
A
ICM
Pulsed Collector Current@ TC=25℃
120
A
IF
Diode Forward Current
@ TC=25℃
80
A
IF
Diode Forward Current
@ TC=100℃
40
A
IFM
Pulsed forward current
120
A
PD
Power Dissipation ,
TC=25℃
468
W
Tj
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃


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