J108 datasheet(4/7 Pages) PHILIPS

Teilenummer	J108

Bauteilbeschribung	N-channel silicon junction FETs

PDF	7 Pages

Scroll/Zoom	100%

Hersteller	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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4 / 7 page

1996 Jul 30

Philips Semiconductors

Product speciﬁcation

N-channel silicon junction FETs

J108; J109; J110

DYNAMIC CHARACTERISTICS

Tj =25 °C; unless otherwise speciﬁed.

Note

1. Test conditions for switching times are as follows:

VDD = 1.5 V; VGS = 0 to VGSoff (all types)

VGSoff = −12 V; RL = 100 Ω (J108)

VGSoff = −7 V; RL = 100 Ω (J109)

VGSoff = −5 V; RL = 100 Ω (J110).

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Cis

input capacitance

VDS = 0; VGS = −10 V; f = 1 MHz

VDS = 0; VGS = 0; f = 1 MHz;

Tamb =25 °C

Crs

reverse transfer capacitance

VDS = 0; VGS = −10 V; f = 1 MHz

Switching times; see Fig.2

delay time

note 1

−

ton

turn-on time

−

storage time

−

toff

turn-off time

−

Fig.2 Switching circuit.

handbook, halfpage

MGE773

Ω

DUT

SAMPLING

SCOPE

Ω

0.1

µF

10 nF

VDD

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