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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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AM29LV128ML103REF Datenblatt(PDF) 58 Page - Advanced Micro Devices |
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AM29LV128ML103REF Datenblatt(HTML) 58 Page - Advanced Micro Devices |
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58 / 66 page  58 Am29LV128MH/L 25270C7 January 31, 2007 D A TA SH EE T AC CHARACTERISTICS Alternate CE# Controlled Erase and Program Operations Notes: 1. Not 100% tested. 2. See “Erase And Programming Performance” on page 60 for more information. 3. For 1–16 words/1–32 bytes programmed. 4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation. 5. Word programming specification is based upon a single word programming operation not utilizing the write buffer. 6. AC Specifications listed are tested with V IO = VCC. Contact AMD for information on AC operation with VIO ≠ VCC. 7. When using the program suspend/resume feature, if the suspend command is issued within t POLL, tPOLL must be fully re-applied upon resuming the programming operation. If the suspend command is issued after t POLL, tPOLL is not required again prior to reading the status bits upon resuming. Parameter Speed Options JEDEC Std. Description 93R 103, 103R 113, 113R 123, 123R Unit t AVAV t WC Write Cycle Time (Note 1) Min 90 100 110 120 ns t AVWL t AS Address Setup Time Min 0 ns t ELAX t AH Address Hold Time Min 45 ns t DVEH t DS Data Setup Time Min 45 ns t EHDX t DH Data Hold Time Min 0 ns t GHEL t GHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns t WLEL t WS WE# Setup Time Min 0 ns t EHWH t WH WE# Hold Time Min 0 ns t ELEH t CP CE# Pulse Width Min 45 ns t EHEL t CPH CE# Pulse Width High Min 30 ns t WHWH1 t WHWH1 Write Buffer Program Operation (Notes 2, 3) Typ 240 µs Effective Write Buffer Program Operation (Notes 2, 4) Per Byte Typ 7.5 µs Per Word Typ 15 µs Accelerated Effective Write Buffer Program Operation (Notes 2, 4) Per Byte Typ 6.25 µs Per Word Typ 12.5 µs Single Word Program Operation (Note 2, 5) Typ 60 µs Accelerated Single Word Programming Operation (Note 2, 5) Typ 54 µs t WHWH2 t WHWH2 Sector Erase Operation (Note 2) Typ 0.5 sec t POLL Program Valid before Status Polling (Note 7) Max 4 µs |
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