AM29LV128ML123REF datasheet(60/66 Pages) AMD

60 / 66 page

Am29LV128MH/L

25270C7 January 31, 2007

D A TA

SH EE T

ERASE AND PROGRAMMING PERFORMANCE

Notes:

1. Typical program and erase times assume the following conditions: 25

°C, 3.0 V V

CC. Programming specifications assume that

all bits are programmed to 00h.

2. Maximum values are measured at VCC = 3.0, worst case temperature. Maximum values are valid up to and including 100,000

program/erase cycles.

3. Word programming specification is based upon a single word programming operation not utilizing the write buffer.

4. For 1-16 words or 1-32 bytes programmed in a single write buffer programming operation.

5. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.

6. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words

program faster than the maximum program times listed.

7. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.

8. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See

Table 11 for further information on command definitions.

9. The device has a minimum erase and program cycle endurance of 100,000 cycles.

Parameter

Typ (Note 1)

Max (Note 2)

Unit

Comments

Sector Erase Time

0.5

3.5

sec

Excludes 00h programming

prior to erasure (Note 6)

Chip Erase Time

128

256

sec

Single Word Program Time (Note 3)60

600

µs

Excludes system level

overhead (Note 8)

Accelerated Single Word Program Time

(Note 3)

540

µs

Total Write Buffer Program Time (Note 4)

240

1200

µs

Effective Write Buffer Program

Time (Note 5)

Per Byte

7.5

µs

Per Word

µs

Total Accelerated Write Buffer Program Time

(Note 4)

200

1040

µs

Effective Accelerated Write

Buffer Program Time

(Note 5)

Per Byte

6.25

µs

Per Word

12.5

µs

Chip Program Time

126

292

sec

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