| Datenblatt-Suchmaschine für elektronische Bauteile |
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AM29LV320ML112REF Datenblatt(PDF) 52 Page - Advanced Micro Devices |
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AM29LV320ML112REF Datenblatt(HTML) 52 Page - Advanced Micro Devices |
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52 / 59 page ![]() 50 Am29LV320MH/L 26517B4 January 31, 2007 D A TA SH EE T AC CHARACTERISTICS Alternate CE# Controlled Erase and Program Operations Notes: 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. 3. For 1–16 words/1–32 bytes programmed. 4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation. 5. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer. 6. AC specifications listed are tested with V IO = VCC. Contact AMD for information on AC operation with VIO ≠ VCC. 7. When using the program suspend/resume feature, if the suspend command is issued within t POLL, tPOLL must be fully re-applied upon resuming the programming operation. If the suspend command is issued after tPOLL, tPOLL is not required again prior to reading the status bits upon resuming. Parameter Speed Options JEDEC Std. Description 90R 101, 101R 112, 112R 120, 120R Unit tAVAV tWC Write Cycle Time (Note 1) Min 90 100 110 120 ns tAVWL tAS Address Setup Time Min 0 ns tELAX tAH Address Hold Time Min 45 ns tDVEH tDS Data Setup Time Min 45 ns tEHDX tDH Data Hold Time Min 0 ns tGHEL tGHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns t WLEL t WS WE# Setup Time Min 0 ns t EHWH t WH WE# Hold Time Min 0 ns t ELEH t CP CE# Pulse Width Min 45 ns t EHEL t CPH CE# Pulse Width High Min 30 ns t WHWH1 t WHWH1 Write Buffer Program Operation (Notes 2, 3) Typ 240 µs Effective Write Buffer Program Operation (Notes 2, 4) Per Byte Typ 7.5 µs Per Word Typ 15 µs Accelerated Effective Write Buffer Program Operation (Notes 2, 4) Per Byte Typ 6.25 µs Per Word Typ 12.5 µs Single Word/Byte Program Operation (Note 2, 5) Byte Typ 60 µs Word 60 Accelerated Single Word/Byte Programming Operation (Note 2) Byte Typ 54 µs Word 54 t WHWH2 t WHWH2 Sector Erase Operation (Note 2, 5) Typ 0.5 sec t RH RESET High Time Before Write (Note 1) Min 50 ns t POLL Program Valid before Status Polling (Note 7) Max 4 µs |
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