Silicon NPN Power Transistor

KSC5402DT

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

BVCBO

Collector-Base breakdown Voltage

IC= 1mA,IE=0

1000

--

--

V

BVCEO

Collector-Emitter breakdown Voltage

IC= 5mA,IB=0

450

--

--

V

BVEBO

Emitter-Base breakdown Current

IE=1mA,IC=0

12

--

--

V

ICEO

Collector Cutoff Current

VCE= 450V; IE= 0

--

--

100

uA

IEBO

Emitter Cutoff Current

VEB= 10V; IC= 0

--

--

100

uA

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 0.4A; IB= 0.04A

--

--

0.6

V

IC= 1A; IB= 0.2A

--

--

0.75

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 0.4A; IB= 0.04A

--

--

1.0

V

IC= 1A; IB= 0.2A

--

--

1.1

V

hFE1

DC Current Gain

IC= 0.4A; VCE= 1V

14

--

--

hFE2

DC Current Gain

IC= 1A; VCE= 1V

6

--

--

PRODUCT DISCLAIMER

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

ISC products are intended for usage in general electronic equipment. The products are not designed for

use in equipment which require specialized quality and/or reliability, or in equipment which could have

applications in hazardous environments, aerospace industry, or medical field. Please contact us if you

intend our products to be used in these special applications.

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