| Datenblatt-Suchmaschine für elektronische Bauteile |
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KSC5402DT Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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KSC5402DT Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Silicon NPN Power Transistor KSC5402DT www.iscsemi.com 1 DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 1000V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.6V(Max) @IC= 0.4A APPLICATIONS · Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 12 V IC Collector Current-Continuous 2 A ICP Collector Current (Pulse) 5 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 3 2 1 TO-220C Package Pin 1 Base 2 Collector 3 Emitter |
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Ähnliche Beschreibung - KSC5402DT |
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