MJD210 datasheet(1/3 Pages) ISC

Teilenummer	MJD210

Bauteilbeschribung	Silicon PNP Power Transistor

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Silicon PNP Power Transistor

MJD210

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= -25V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat):= -0.3V(Max) @IC= -0.5A

APPLICATIONS

· Designed for use in general purpose amplifer and low

Speed switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-25

V

VEBO

Emitter-Base Voltage

-8

V

IC

Collector Current-Continuous

-5

A

ICM

Collector Current-Peak

-10

A

IB

Base Current

-1

A

PC

Collector Power Dissipation

Ta=25℃

1.4

W

Collector Power Dissipation

TC=25℃

12.5

Ti

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

10

℃

/W

Rth j-a

Thermal Resistance,Junction to

Ambient

89.3

℃

/W

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