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IRLR120ATF Datenblatt(PDF) 1 Page - BYCHIP ELECTRONICS CO., LIMITED

Teilenummer IRLR120ATF
Bauteilbeschribung  N-channel Enhancement Mode Power MOSFET
PDF  4 Pages
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Hersteller  BYCHIP [BYCHIP ELECTRONICS CO., LIMITED]
Direct Link  http://www.bychip.cn/
Logo BYCHIP - BYCHIP ELECTRONICS CO., LIMITED

IRLR120ATF Datenblatt(HTML) 1 Page - BYCHIP ELECTRONICS CO., LIMITED

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background image
Symbol
Unit
VDS
V
VGS
V
IDM
A
IAS
A
EAS
mJ
TJ, TSTG
°C
A
W
TC = 100°C
17.9
Avalanche Current
(3)
4.5
Avalanche Energy
(3)
1.0
Pulsed Drain Current
(2)
72
Continuous Drain
Current
(1)
TC = 25°C
ID
18.1
TC = 100°C
11.4
Junction & Storage Temperature Range
-55 to 150
Power Dissipation
(4)
TC = 25°C
PD
45
Drain-to-Source Voltage
100
Gate-to-Source Voltage
±20
Value
Absolute Maximum Ratings (@ T
A = 25°C unless otherwise specified)
Parameter
0
40
80
120
160
200
0
4
8
12
16
20
VGS (V)
0
2
4
6
8
10
012
34
5
Qg (nC)
RDS(ON) vs. VGS
Gate Charge
VDS = 50V
ID = 9.0A
ID = 9.0A
N-channel Enhancement Mode Power MOSFET
Features
 VDS=
100V, ID= 18.1 A
RDS(ON) <
57 mΩ @ VGS = 10V
RDS(ON) <
70 mΩ @ VGS =4.5V
●
Advanced Trench Technology
●
Provide Excellent RDS(ON) and Low Gate
Charge
●
Lead Free and Green Available
100% UIS TESTED!
100% ΔVds TESTED!
General Features
www.bychip.cn
Pin Assignment
TO-252-2L Top View
Schematic Diagram
IRLR120ATF
v1.0


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