Symbol

Min.

Typ.

Max.

Unit

V(BR)DSS

100

V

VDS =80V, VGS = 0V

1.0

TJ = 55°C

5.0

IGSS

±100

nA

Gate Threshold Voltage

VGS(th)

1.2

3.0

V

57

m



70

m



gFS

11.0

S

VSD

0.70

1.0

V

IS

45

A

Ciss

187

pF

Coss

54

pF

Crss

5.0

pF

Rg

1.4



Qg

3.9

nC

Qg

2.2

nC

Qgs

0.50

nC

Qgd

1.1

nC

tD(on)

2.6

ns

tr

3.5

ns

tD(off)

9.4

ns

tf

5.5

ns

trr

30

ns

Qrr

16.1

nC

Symbol

Unit

RJA

°C/W

RJC

°C/W

Notes:

2.8

IF = 9.0A, dIF/dt = 100A/s

Parameter

SWITCHING PARAMETERS

(5)

2. This single-pulse measurement was taken under TJ_Max = 150°C.

3. This single-pulse measurement was taken under the following condition [L = 100

H, VGS = 10V, VDD = 50V] while its value is limited by

4. The power dissipation PD is based on TJ_Max = 150°C.

5. This value is guaranteed by design hence it is not included in the production test.

TJ_Max = 150°C.

1. Computed continuous current assumes the condition of TJ_Max while the actual continuous current depends on the thermal & electro-mechanical

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Typ.

Thermal Performance

Max.

VGS = 4.5V, ID = 6.0A

Static Drain-Source ON-Resistance

RDS(ON)

TC = 25°C

Input Capacitance

VGS = 0V, VDS = 50V, f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

DYNAMIC PARAMETERS

(5)

application board design.

Gate Resistance

VGS = 0V, VDS= 0V, f = 1MHz

Total Gate Charge (@ VGS = 10V)

VGS = 0 to 10V

VDS = 50V, ID = 9.0A

Total Gate Charge (@ VGS = 4.5V)

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

VGS = 10V, VDS = 50V

RL = 5.6, RGEN = 6

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

66

3.6

55

Parameter

Conditions

Drain-Source Breakdown Voltage

ID = 250A, VGS = 0V

STATIC PARAMETERS

Electrical Characteristics (@ T

J = 25°C unless otherwise specified)

A

Gate-Body Leakage Current

VDS = 0V, VGS = ±20V

Body Diode Reverse Recovery Time

IF = 9.0A, dIF/dt = 100A/s

Body Diode Reverse Recovery Charge

Zero Gate Voltage Drain Current

IDSS

VDS = VGS, ID = 250A

Diode Continuous Current

VGS = 10V, ID = 9.0A

Forward Transconductance

VDS = 5V, ID = 7.5A

Diode Forward Voltage

IS = 1A, VGS = 0V

www.bychip.cn

IRLR120ATF

v2.0