SVT034R0NL5TR datasheet(4/9 Pages) SILAN

4 / 9 page

Silan

Microelectronics

SVT034R0NL5_Datasheet

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Rev.:1.2

http: //www.silan.com.cn

Page 4 of 9

TYPICAL CHARACTERISTICS

Figure 5. Turn-on Voltage vs.

Temperature characteristics

Figure 1. Output Characteristics

Drain-Source Voltage – VDS(V)

Notes:

1.250µs pulse test

2.Tc=25°C

100

150

250

300

200

Figure 2. Transfer Characteristics

Gate-source Voltage - VGS (V)

0.1

1000

100

-55°C

25°C

150°C

Drain Current - ID (A)

Figure 3. On-resistance vs. Drain Current

100

Note: TJ=25°C

0.1

1.0

0.4

0.6

0.8

1.0

1.4

1000

Source-Drain Voltage - VSD (V)

Figure 6. Body Diode Forward Voltage

Variation vs. Source Current and Temperature

0.2

Notes:

1. VGS=0V

2. 250µs pulse test

100

1.2

-55°C

25°C

150°C

Gate-source Voltage - VGS (V)

Figure 4. On-resistance vs. Gate-source Voltage

Note: ID=20A

Notes:

1.VDS=5V

2.250µs pulse test

Tj=150°C

Tj=25°C

Junction Temperature - TJ(°C)

-100

200

-50

100

Note: ID=250µA

150

VGS=2.5V

VGS=3.0V

VGS=3.5V

VGS=4.5V

VGS=10V

VGS=8.0V

VGS=4.5V

VGS=10V

SVT034R0NL5TR Datenblatt(PDF) 4 Page - Silan Microelectronics Joint-stock

SVT034R0NL5TR Datenblatt(HTML) 4 Page - Silan Microelectronics Joint-stock

Html Pages

1 2 3 4 5 6 7 8 9

Datenblatt Download

Link URL