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SVT034R0NL5TR Datenblatt(PDF) 5 Page - Silan Microelectronics Joint-stock

Teilenummer SVT034R0NL5TR
Bauteilbeschribung  100A, 30V N-CHANNEL MOSFET
PDF  9 Pages
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Hersteller  SILAN [Silan Microelectronics Joint-stock]
Direct Link  http://www.silan.com.cn
Logo SILAN - Silan Microelectronics Joint-stock

SVT034R0NL5TR Datenblatt(HTML) 5 Page - Silan Microelectronics Joint-stock

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Silan
Microelectronics
SVT034R0NL5_Datasheet
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Rev.:1.2
http: //www.silan.com.cn
Page 5 of 9
TYPICAL CHARACTERISTICS (CONTINUED)
Figure 7. Capacitance Characteristics
Drain-Source Voltage - VDS(V)
Gate Charge - QG (nC)
Figure 8. Gate Charge
Figure 9. Breakdown Voltage Variation vs. Temperature
Junction Temperature – TJ(°C)
0.8
0.9
1.2
1.1
-100
-50
0
50
100
200
150
1.0
Notes:
1. VGS=0V
2. ID=250µA
0.0
1.5
-100
100
200
2.5
50
0.5
0
150
Notes:
1. VGS=10V
2. ID=20A
-50
Junction Temperature – TJ(°C)
Figure 10. On-resistance Variation vs. Temperature
1.0
2.0
0
50
0
125
175
70
100
30
75
150
25
Temperature - TC(°C)
Figure 12. Power Dissipation vs. Case Temperature
40
20
50
60
Figure 11. Max. Safe Operating Area
Drain Source Voltage - VDS(V)
10
10
-1
10
1
10
2
10
-1
10
1
10
2
10
3
10
0
Note: Tc=25°C
DC
10ms
1ms
100µs
10
0
Ope ration in This Area is
Limited by RDS(ON)
10µs
0
10
20
30
10
2
10
4
15
10
3
Ciss
Coss
Crss
5
25
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
Notes:
1. VGS=0V
2. f=1MHz
0
5
4
1
6
0
10
25
2
3
30
20
VDS=24V
VDS=15V
VDS=6V
5
15
Note: ID=20A



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