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STW9N150 Datenblatt(PDF) 5 Page - STMicroelectronics

Teilenummer STW9N150
Bauteilbeschribung  N-channel 1500 V - 1.8 Ω - 8 A - TO-247 very high voltage PowerMESH™ Power MOSFET
PDF  12 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW9N150 Datenblatt(HTML) 5 Page - STMicroelectronics

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STW9N150
Electrical characteristics
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Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 750 V, ID = 4 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14)
41
14.7
86
52
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
8
32
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 8 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 16)
988
9.5
19.3
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 16)
884
8.2
18.6
ns
µC
A



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