2

CGH40025 Rev .0 Preliminary

Cree, Inc.

4600 Silicon Drive

Durham, NC 27703

USA Tel: +1.919.313.5300

Fax: +1.919.313.5778

www.cree.com/wireless

Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the

Cree logo are registered trademarks of Cree, Inc.

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter

Symbol

Rating

Units

Drain-Source Voltage

V

DSS

84

Volts

Gate-to-Source Voltage

V

GS

-10, +2

Volts

Storage Temperature

T

STG

-55, +150

˚C

Operating Junction Temperature

T

J

175

˚C

Maximum Forward Gate Current

I

GMAX

4.0

mA

Soldering Temperature

T

S

245

˚C

Thermal Resistance, Junction to

R

θJC

3.8

˚C/W

Note:

1

Measured for the CGH40025F at P

Electrical Characteristics (T

Characteristics

Symbol

Min.

Typ.

Max.

Units

Conditions

Gate Threshold Voltage

V

GS(th)

-3.0

-2.5

-1.8

VDC

V

Gate Quiescent Voltage

V

GS(Q)

–

-2.0

–

VDC

V

Saturated Drain Current

I

DS

4.8

5.4

–

A

V

Drain-Source Breakdown Voltage

V

BR

84

100

–

VDC

V

Case Operating Temperature

T

C

-10

–

+65

˚C

Screw Torque

T

–

–

60

in-oz

Reference 440166 Package Revision 3

RF Characteristics (T

Small Signal Gain

G

SS

–

13

–

dB

V

Power Output at 3 dB

Compression

P

3dB

–

30

–

W

V

η

–

62

–

%

V

Output Mismatch Stress

VSWR

–

TBD

–

Y

No damage at all phase angles,

V

P

Dynamic Characteristics

Input Capacitance

C

GS

–

9.3

–

pF

V

Output Capacitance

C

DS

–

2.0

–

pF

V

Feedback Capacitance

C

GD

–

0.9

–

pF

V

Notes:

1

Drain Efficiency = P

2

Measured on wafer prior to packaging.