Data Sheet

ADH8412S-CSL

Commercial Space

Product

Low Noise Amplifier, 0.4 GHz to 11 GHz

Rev. 0

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FEATURES

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Low noise figure: 1.4 dB typical at 0.4 GHz to 3 GHz

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Single positive supply (self biased)

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High gain: ≤15.5 dB typical

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High OIP3: ≤33 dBm typical

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RoHS compliant, 2 mm × 2 mm, 6-lead LFCSP

COMMERCIAL SPACE FEATURES

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Supports aerospace applications

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Wafer diffusion lot traceability

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Radiation monitor

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Total ionizing dose (TID)

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Outgassing characterization

APPLICATIONS

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Low and medium Earth orbit (LEO/MEO) satellites

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Avionics

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Test instrumentation

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Telecommunications

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Military radar and communication

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Electronic warfare

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Aerospace

GENERAL DESCRIPTION

The ADH8412S-CSL is a gallium arsenide (GaAs), monolithic mi-

crowave integrated circuit (MMIC), pseudomorphic high electron

mobility transistor (pHEMT), low noise wideband amplifier that

operates from 0.4 GHz to 11 GHz.

The ADH8412S-CSL provides a typical gain of 15.5 dB, a 1.4 dB

typical noise figure, and a typical output third-order intercept (OIP3)

of ≤33 dBm, requiring only 60 mA from a 5 V drain supply voltage.

The saturated output power (PSAT) of ≤20.5 dBm typical enables the

low noise amplifier (LNA) to function as a local oscillator (LO) driver

for many Analog Devices, Inc., balanced, in-phase and quadrature

(I/Q), or image rejection mixers.

The ADH8412S-CSL also features inputs and outputs that are inter-

nally matched to 50 Ω, making the device ideal for surface-mount

technology (SMT)-based, space applications.

The ADH8412S-CSL is housed in a 2 mm × 2 mm, 6-lead lead

frame chip scale package (LFCSP).

Additional application and technical information can be found in the

Commercial Space Products Program brochure and HMC8412 data

sheet.

FUNCTIONAL BLOCK DIAGRAM

Figure 1. Functional Block Diagram