Data Sheet

ADL8105

GaAs, pHEMT, MMIC, Low Noise Amplifier, 5 GHz to 20 GHz

Rev. A

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FEATURES

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Single positive supply (self biased)

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Gain: 27 dB typical at 12 GHz to 17 GHz

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OP1dB: 18 dB typical at 12 GHz to 17 GHz

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OIP3: 30.5 dBm typical at 12 to GHz to 17 GHz

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Noise figure: 1.8 dB typical at 12 GHz to 17 GHz

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RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP

APPLICATIONS

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Telecommunications

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Satellite communications

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Military radar

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Weather radar

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Electronic warfare

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Instrumentation

FUNCTIONAL BLOCK DIAGRAM

Figure 1. Functional Block Diagram

GENERAL DESCRIPTION

The ADL8105 is a gallium arsenide (GaAs), monolithic microwave

integrated circuit (MMIC), pseudomorphic high electron mobility

transistor (pHEMT), low noise wideband amplifier that operates

from 5 GHz to 20 GHz.

The ADL8105 provides a typical gain of 27 dB at 12 GHz to 17

GHz, a 1.8 dB typical noise figure from 12 GHz to 17 GHz, a

typical output third-order intercept (OIP3) of 30.5 dBm at 12 GHz

to 17 GHz, and a saturated output power (PSAT) of up to 20.5

dBm, requiring only 90 mA from a 5 V supply voltage. The power

dissipation can be lowered at the expense of OIP3 and output

power (POUT). The ADL8105 also features inputs and outputs that

are internally matched to 50 Ω. The RFIN and RFOUT pins are

internally ac-coupled, and the bias inductor is also integrated,

making it ideal for surface-mounted technology (SMT)-based, high

capacity microwave radio applications.

The ADL8105 is housed in an RoHS-compliant, 2 mm × 2 mm,

8-lead LFCSP package.