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ADL8105ACPZN-R7 Datenblatt(PDF) 19 Page - Analog Devices

Teilenummer ADL8105ACPZN-R7
Bauteilbeschribung  GaAs, pHEMT, MMIC, Low Noise Amplifier, 5 GHz to 20 GHz
PDF  22 Pages
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Hersteller  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

ADL8105ACPZN-R7 Datenblatt(HTML) 19 Page - Analog Devices

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Data Sheet
ADL8105
APPLICATIONS INFORMATION
analog.com
Rev. A | 19 of 22
The basic connections for operating the ADL8105 over the speci-
fied frequency range are shown in Figure 74. No external biasing
inductor is required, allowing the 5 V supply to be connected to
the VDD pin. It is recommended to use 0.01 µF and 100 pF
power supply decoupling capacitors. The power supply decoupling
capacitors shown in Figure 74 represent the configuration used to
characterize and qualify the ADL8105.
To set IDQ, connect a resistor (R2) between the RBIAS and VDD
pins. A default value of 392 Ω is recommended, which results in
a nominal IDQ of 90 mA. Table 9 shows how IDQ and IDQ_AMP vary
vs. RBIAS. The RBIAS pin also draws a current that varies with the
value of RBIAS (see Table 9). Do not leave the RBIAS pin open.
Correct sequencing of the dc and RF power is required to safely
operate the ADL8105. During power-up, apply VDD before the RF
power is applied to RFIN, and during power-off, remove the RF
power from RFIN before VDD is powered off.
Figure 74. Typical Application Circuit
RECOMMENDED BIAS SEQUENCING
See the ADL8105-EVALZ user guide for the recommended bias
sequencing information.
Table 9. Recommended RBIAS Values for VDD = 5 V
RBIAS (kΩ)
IDQ (mA)
IDQ_AMP (mA)
IRBIAS (mA)
5
40
39.18
0.82
2.75
50
48.6
1.4
1.7
60
57.9
2.1
1.1
70
67.2
2.8
0.73
80
76.4
3.6
0.392
90
85
5
0.305
100
94.6
5.4
0.18
110
103.6
6.4



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