STAV27240AY2 datasheet(2/6 Pages) INNOGRATION

Teilenummer	STAV27240AY2

Bauteilbeschribung	Gallium Nitride 50V, 240W,2.5-2.7GHz RF Power Transistor

PDF	6 Pages

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Hersteller	INNOGRATION [Innogration Technologies, Inc.]

Direct Link	http://www.innogration.net/index.htm

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Innogration (Suzhou) Co., Ltd

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Document Number: STAV27240AY2

Preliminary Datasheet V1.0

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

+200

Vdc

Gate--Source Voltage

VGS

-8 to +0.5

Vdc

Operating Voltage

VDD

Vdc

Maximum gate current

Igs

Storage Temperature Range

Tstg

-65 to +150

C

Case Operating Temperature

+150

C

Operating Junction Temperature

+225

C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case by FEA

TC= 85C, at Pd=60W

RJC

1.4

C /W

Table 3. Electrical Characteristics (TA = 25℃ unless otherwise noted)

DC Characteristics (Each path, measured on wafer prior to packaging)

Characteristic

Conditions

Symbol

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VGS=-8V; IDS=30mA

VDSS

200

Gate Threshold Voltage

VDS =10V, ID = 30mA

VGS(th)

-4

-2

Gate Quiescent Voltage

VDS =50V, IDS=200mA,

Measured in Functional Test

VGS(Q)

-3.23

Ruggedness Characteristics

Characteristic

Conditions

Symbol

Min

Typ

Max

Unit

Load mismatch capability

2.6GHz, Pout=240W pulse CW

for each path

All phase,

No device damages

VSWR

10:1

Figure 2: Median Lifetime vs. Channel Temperature

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