Innogration (Suzhou) Co., Ltd

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Document Number: STAV27240AY2

Preliminary Datasheet V1.0

Gallium Nitride 50V, 240W,2.5-2.7GHz RF Power Transistor

Description

The STAV27240AY2 is a single ended 240watt, GaN HEMT, ideal for applications from 2.5 to 2.7GHz.

It is an input matched transistor capable of delivering Psat 270W.

It can support CW, pulse or any modulated signal.

There is no guarantee of performance when this part is used outside of stated frequencies.



Typical pulse CW performance across 2.5-2.7GHz

VDD = 50 Vdc, IDQ = 200mA, Pulse width=20us, duty cycle=20%, Tc=25C

(On innogration application board with device soldered)

Freq(MHz)

P1(dBm)

P3(dBm)

P3(W)

Eff(%)@P3

2500

53.64

55.07

321

67.08

2600

53.00

54.54

284

68.75

2700

51.69

53.70

234

69.71



WCMDA 3GPP TM1 64 DPCH 9.9 dB PAR @ 0.01% CCDF. VDS = 50 V, IDQ = 200 mA,

POUT = 56W across 2.5-2.7G (On innogration Class AB application board with device soldered)

Applications

 Sub-3GHz pulse or CW amplifier

 5G N41 base station amplifier

Important Note: Proper Biasing Sequence for GaN HEMT Transistors

Turning the device ON

1. Set VGS to the pinch--off (VP) voltage, typically –5 V

2. Turn on VDS to nominal supply voltage

3. Increase VGS until IDS current is attained

4. Apply RF input power to desired level

Turning the device OFF

1. Turn RF power off

2. Reduce VGS down to VP, typically –5 V

3. Reduce VDS down to 0 V

4. Turn off VGS

Figure 1: Pin Connection definition

Transparent top view (Backside grounding for source)

STAV27240AY2