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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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GD950HTX75P6HB Datenblatt(PDF) 2 Page - StarPower Europe AG |
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GD950HTX75P6HB Datenblatt(HTML) 2 Page - StarPower Europe AG |
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2 / 11 page  GD950HTX75P6HB IGBT Module ©2021 STARPOWER Semiconductor Ltd. 9/30/2021 2/11 B05 Absolute Maximum Ratings T F=25 oC unless otherwise noted IGBT Symbol Description Values Unit VCES Collector-Emitter Voltage 750 V VGES Gate-Emitter Voltage ±20 V ICN Implemented Collector Current 950 A IC Collector Current @ TF=90 oC 450 A ICM Pulsed Collector Current tp=1ms 1900 A PD Maximum Power Dissipation @ TF=75 oC T j=175 oC 877 W Diode Symbol Description Values Unit VRRM Repetitive Peak Reverse Voltage 750 V IFN Implemented Collector Current 950 A IF Diode Continuous Forward Current 450 A IFM Diode Maximum Forward Current tp=1ms 1900 A Module Symbol Description Value Unit Tjmax Maximum Junction Temperature 175 oC Tjop Operating Junction Temperature continuous For 10s within a period of 30s,occurrence maximum 3000 times over lifetime -40 to +150 +150 to +175 oC TSTG Storage Temperature Range -40 to +125 oC VISO Isolation Voltage RMS,f=50Hz,t=1min 2500 V |
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