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GD950HTX75P6HB Datenblatt(PDF) 5 Page - StarPower Europe AG |
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GD950HTX75P6HB Datenblatt(HTML) 5 Page - StarPower Europe AG |
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5 / 11 page ![]() GD950HTX75P6HB IGBT Module ©2021 STARPOWER Semiconductor Ltd. 9/30/2021 5/11 B05 Module Characteristics T F=25 oC unless otherwise noted Symbol Parameter Min. Typ. Max. Unit LCE Stray Inductance 8 nH RCC’+EE’ Module Lead Resistance, Terminal to Chip 0.75 mΩ △p △V/△t=10.0dm3/min,TF=75oC 64 mbar p Maximum Pressure In Cooling Circuit Tbaseplate<40 oC Tbaseplate >40 oC (relative pressure) 2.5 2.0 bar RthJF Junction-to-Cooling Fluid (per IGBT) Junction-to-Cooling Fluid (per Diode) △V/△t=10.0dm3/min,TF=75oC 0.098 0.128 0.114 0.147 K/W M Terminal Connection Torque, Screw M5 Mounting Torque, Screw M4 3.6 1.8 4.4 2.2 N.m G Weight of Module 750 g |
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